NOT RECOMMENDED FOR NEW DESIGN
USE DMG3402L
DMN3052L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low On-Resistance:
R DS(ON) < 32m ? @ V GS = 10V
R DS(ON) < 42m ? @ V GS = 4.5V
R DS(ON) < 64m ? @ V GS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
Source
G
S
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 12
Unit
V
V
Drain Current (Note 1)
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
T A = 25°C
T A = 70°C
Pulsed
I D
I DM
I S
5.4
4.6
19
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 1)
Operating and Storage Temperature Range
1. Device mounted on FR-4 PCB. t ≤ 5 sec.
Notes:
Symbol
P D
R ? JA
T J, T STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN3052L
Document number: DS31406 Rev. 5 - 3
1 of 6
www.diodes.com
December 2013
? Diodes Incorporated
相关PDF资料
DMN3052LSS-13 MOSFET N-CH 30V 7.1A 8-SOIC
DMN3110S-7 MOSFET N-CH 30V 2.5A SOT-23
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3112SSS-13 MOSFET N-CH 30V 6A 8SOP
DMN3115UDM-7 MOSFET N-CH 30V 3.2A SOT-26
DMN3135LVT-7 MOSFET N CH 30V 4.1A TSOT26
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